www. mccsemi .com MBR20150ct 2 0 a m p h i gh v o l t ag e features h ig h j u nc t io n t em p er at u re c a pa b i l it y g oo d t ra d e o ff b et we en l ea k ag e c ur - re n t a n d f or w a r d v ol a ge d ro p l ow l e a ka ge c urr e nt mcc catalog number maximum r e current peak reverse voltage maximum rms voltage maximum dc blocking voltage m b r 2 0 15 0 ct 15 0 v 10 5 v 150 v electrical characteristics @ 2 5 c unless otherwise specified average forward current i f(av) 2 0 a t c = 1 5 5 c peak forward surge current i fsm 1 8 0 a 8.3 ms, ha l f maximum instantaneous forward voltage m b r 2 0 1 5 0 ct v f . 9 2 v mcc * pulse test: pulse width 38 0 m sec, duty cycle 2 % i fm = 1 0 a t j = 2 5 c i n c h es m m
a . 600 . 62 0 1 5.25 1 5 . 75 b . 3 93 . 4 09 10.00 1 0 . 40 n 0.102t y p. 2.6t yp . pin 1 pin 3 pin 2 case a b c k j i h g f e d n m l h 15 0 v ol ts to - 22 0a b p i n 13 maximum ratings operating j u n c t i o n temperature : 1 5 0 c storage temperature: - 5 0 c to + 1 5 0 c p er d i o de thermal resistance 2 .2 c/w junction to ca se
om p on ent s 21 20 1 i t a sc a s t ree t ch at s w or th ! " # $
% ! " # c .104 .116 2.65 2.95 d .244 . 259 6.20 6.60 e .356 . 361 9.05 9.15 f .137 .154 3.50 3.93 g .511 . 551 13.00 14.00 h .094 . 106 2.40 2.70 i . 024 .034 0.61 0.88 j .019 . 027 0.49 0.70 k .147 . 151 3.75 3.85 l .173 . 181 4.40 4.60 m .048 . 051 1.23 1.32 t o ta l thermal resistance 1. 3 c/w junction to case b a rr ie r r e ct i f ie r p o we r s c h ot tk y maximum reverse current at rated dc blocking voltage i r 25 m a t j = 25 c 5 m a t j = 1 25 c v f . 75v i f m = 10 a t j = 1 25 c si ne w a ve
www. mccsemi .com mb r 201 50 c t mcc 0123456789101112 0 1 2 3 4 5 6 7 8 9 10 if(av) (a) pf(av)(w) t d =tp/t tp d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 1 fig . 1 : averag e forwar d powe r dissipatio n versus average forward current (per diode). 0 2 5 5 0 7 5 100 125 150 175 0 2 4 6 8 10 12 tamb(c) if(av)(a) rth(j-a)=rth(j-c) rth(j-a)=15c/w t d =tp/t tp fig. 2: average forward current versus ambient temperature ( d = 0.5, per diode). 1e-3 1e-2 1e-1 1e+0 0 25 50 75 100 125 150 t(s) im(a) tc=50c tc=75c tc=125c i m t d =0.5 fig. 3: non repetitive surge peak forward current versus overload duration (maximum values, per diode). 1e-3 1e-2 1e-1 1e+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) zth(j-c)/rth(j-c) t d =tp/t tp d = 0.5 d = 0.2 d = 0.1 single pulse fig. 4: relative variation of thermal impedance junction to case versus pulse duration (per diode). 0 2 5 5 0 7 5 100 125 150 1e-1 1e+0 1e+1 1e+2 1e+3 1e+4 1e+5 vr(v) ir(a) tj=125c tj=25c tj=150c tj=100c tj=175c fig. 5: reverse leakage current versus reverse voltage applied (typical values, per diode). 1 2 5 10 20 50 100 200 10 100 1000 vr(v) c(pf) f=1mhz tj=25c fig. 6: junction capacitance versus reverse voltage applied (typical values, per diode).
www. mccsemi .com mcc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1.0 10.0 100.0 vfm(v) ifm(a) tj=25c tj=125c typical values tj=125c fig. 7: forward voltage drop versus forward current (maximum values, per diode). 0 2 4 6 8 101214161820 0 10 20 30 40 50 60 70 80 s(cm2) rth(j-a) (c/w) fig. 8: thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board, copper thickness: 35m) (stps20150cg only).
|
